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| SMD Type MOS Field Effect Transistor 2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in gate protection diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 25 70 45 1.0 150 -55 to +150 Unit V V A A W W 3.80 Low Ciss: Ciss = 1900 pF TYP. www.kexin.com.cn 1 SMD Type 2SJ600 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 1.5 10 2.0 20 41 55 Min Typ MOSFET IC Max -10 10 2.5 Unit A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = -25A VDD= -48 V VGS =-10 V IF = -25A, VGS = 0 V IF = -25 A, VGS = 0 V di/dt = 100 A / s VGS(on)=-10V,ID=--13A ,VDD=-30V,RG=0 VDS=-10V,VGS=0,f=1MHZ VDS=-10V,ID=-13A VGS=-10V,ID=-13A VGS=-4.0V,ID=-13A 50 79 m m pF pF pF ns ns ns ns nC nC nC V ns nC 1900 350 140 9 10 67 19 38 7 10 1.0 49 100 2 www.kexin.com.cn |
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